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| 37-39 GHz GaAs MMIC Power Amplifier AA038P5-00 Features s Single Bias Supply Operation (5.5 V) s 18 dB Typical Small Signal Gain s 19 dBm Typical P1 dB Output Power at 39 GHz s 0.25 m Ti/Pd/Au Gates 0.000 1.342 2.166 2.989 0.470 0.000 3.400 0.112 Chip Outline 1.700 1.230 1.588 s 100% On-Wafer RF and DC Testing s 100% Visual Inspection to MIL-STD-883 MT 2010 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Description Alpha's three-stage reactively-matched Ka band GaAs MMIC amplifier has a typical P1 dB of 19 dBm with 17 dB associated gain over the band 37-39 GHz. The chip uses Alpha's proven 0.25 m MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process. All chips are screened for small signal S-parameters and power characteristics prior to shipment for guaranteed performance. A broad range of applications exist in both the high reliability and commercial areas where power and gain are required. Absolute Maximum Ratings Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value -55C to +90C -65C to +150C 7 VDC 19 dBm 175C Electrical Specifications at 25C (VDS = 5.5 V) Parameter Drain Current (at Saturation) Small Signal Gain Input Return Loss Output Return Loss Output Power at 1 dB Gain Compression Saturated Output Power Gain at Saturation Thermal Resistance1 F = 37-39 GHz F = 37-39 GHz F = 37-39 GHz F = 39 GHz F = 39 GHz F = 39 GHz Condition Symbol IDS G RLI RLO P1 dB PSAT GSAT JC 16 19 16 Min. Typ. 200 18 -13 -20 19 21 15 51 -10 -10 Max. 370 Unit mA dB dB dB dBm dBm dB C/W 1. Calculated value based on measurement of discrete FET. Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 8/00A 1 37-39 GHz GaAs MMIC Power Amplifier AA038P5-00 Typical Performance Data 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 POUT at 40 GHz 21.0 S21 (dB) POUT at 39 GHz POUT (dBm) 19.0 (dB) S11 (dB) POUT at 37 GHz POUT at 38 GHz S22 (dB) S12 (dB) 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 17.0 15.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 Frequency (GHz) PIN (dBm) Typical S-Parameters Typical Power Sweep Bias Arrangement 5.5 V .01 F 50 pF Circuit Schematic RF IN RF OUT Detail A VDS 5.5 V .01 F 50 pF For biasing on, adjust VDS from zero to the desired value (5.5 V recommended). For biasing off, reverse the biasing on procedure. RF IN SEE DETAIL A RF OUT VDS 2 Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 8/00A |
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